c top b e c back e b wbfbp-03b plastic-encapsulate transistors TSC143TNND03 transistor description npn digital transistor features 1) built-in bias resistors enable the confi guration of an inverter circuit without connecting external input resistors (see equivalent circuit) 2) the b ias resistors consis t of thin-film resistors with complete isolation to a llow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects 3) only the on/off conditions need to be set for operation, making device design easy application npn digital transistor for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, not e book pc, etc.) marking: 03 equivalent circuit c 03 b e absolute maximum ratings (ta=25 ) symbol para me ter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 100 ma p d power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.5 a emitter cut-off current i ebo v eb =4v,i c =0 0.5 a dc current gain h fe v ce =5v,i c =1ma 100 300 600 collector-emitter saturation voltage v ce(sat) i c =5ma,i b =0.25ma 0.3 v transition frequency f t v ce =10v,i e =-5ma, f=100mhz 250 mhz imput resistor r 1 3.29 4.7 6.11 k ? wbfbp-03b (1.21.20.5) unit: mm 1. base 2. emitter 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
